Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces
نویسندگان
چکیده
منابع مشابه
Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity.
The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper...
متن کاملIn vivo dose verification using using an amorphous silicon flat panel-type imager (a-Si EPIDs)
Introduction: Electronic portal imaging devices (EPIDs) could be used to dose verification of radiotherapy treatment plans. In vivo dose verification is performed to reduce differences found between dose delivered to the patient and the prescribed dose. The aim of this study was to perform a fast and efficient technique for the verification of delivered dose to the patient usin...
متن کاملMeasurement of silicon surface recombination velocity using ultrafast pump–probe reflectivity in the near infrared
Carrier dynamics in Si are predominantly governed by the bulk relaxation time tB , the surface recombination velocity ~SRV! S, and the carrier diffusivity D. In order to measure these parameters a number of purely optical techniques—photomodulated reflectivity ~PMR!, freecarrier absorption ~FCA!, microwave photoconductive decay ~mPCD!, and photothermal radiometry ~PTR! have been developed. The ...
متن کاملTHE EXTRACTION OF THE SURFACE RECOMBINATION VELOCITY OF Si:P EMITTERS USING ADVANCED SILICON MODELS
1 Centre for Photovoltaic Engineering, University of New South Wales, Sydney, 2053, Australia, [email protected] 2 Fraunhofer Institute for Solar Energy Systems, Oltmannstr. 5, 79100 Freiburg, Germany, [email protected], [email protected] 3 Centre for Sustainable Energy Systems, FEIT, Dep. of Engineering, Australian National University, Canberra ACT 0200, Australia, [email protected]....
متن کاملExtremely low surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures
Low surface recombination velocity is critical to the performance of minority carrier devices. Minority carrier lifetime in double heterostructures sDHsd of 0.53-eV p-GaInAsSb confined with 1.0-eV p-AlGaAsSb, and grown lattice-matched to GaSb, was measured by time-resolved photoluminescence. The structures were designed to be dominated by the heterointerface while minimizing the contribution of...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Energy Procedia
سال: 2011
ISSN: 1876-6102
DOI: 10.1016/j.egypro.2011.06.199